- Product Model GA50JT12-247
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description TRANS SJT 1200V 100A TO247AB
- Categories Single FETs, MOSFETs
- In Stock 1500
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 175°C (TJ)
- Technology SiC (Silicon Carbide Junction Transistor)
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 25mOhm @ 50A
- Power Dissipation (Max) 583W (Tc)
- Supplier Device Package TO-247AB
- Drain to Source Voltage (Vdss) 1200 V
- Input Capacitance (Ciss) (Max) @ Vds 7209 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
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