Technical Details

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 10.8W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 27A (Tc), 18A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1122pF @ 15V, 1150pF @ 20V
• Rds On (Max) @ Id, Vgs 9.3mOhm @ 15A, 10V, 30.1mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V, 20nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package 8-QFN (3x3)
• ECCN EAR99
• HTSUS 8541.29.0095