- Product Model NXH004P120M3F2PTNG
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description SILICON CARBIDE (SIC) MODULE EL
- Categories FET, MOSFET Arrays
-
PDF
- In Stock 1500
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 1.1kW (Tj)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 338A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 16410pF @ 800V
- Rds On (Max) @ Id, Vgs 5.5mOhm @ 200A, 18V
- Gate Charge (Qg) (Max) @ Vgs 876nC @ 20V
- Vgs(th) (Max) @ Id 4.4V @ 120mA
- Supplier Device Package 36-PIM (56.7x62.8)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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