Technical Details

• Package / Case 8-DFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5A
• Rds On (Max) @ Id, Vgs 320mOhm @ 1A, 6V
• Vgs(th) (Max) @ Id 1.3V @ 3.5mA
• Supplier Device Package 8-DFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Vgs (Max) +7.5V, -12V
• Drain to Source Voltage (Vdss) 900 V
• Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 6 V
• Input Capacitance (Ciss) (Max) @ Vds 39 pF @ 400 V
• ECCN 3A001
• HTSUS 8541.49.7500
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• RoHS Status RoHS Compliant