Technical Details
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Package / Case
22-PowerBSOP Module
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Mounting Type
Surface Mount
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Operating Temperature
-55°C ~ 175°C (TJ)
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Technology
SiCFET (Silicon Carbide)
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FET Type
N-Channel
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Current - Continuous Drain (Id) @ 25°C
98A (Tc)
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Rds On (Max) @ Id, Vgs
22mOhm @ 41.5A, 18V
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Power Dissipation (Max)
384W (Tc)
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Vgs(th) (Max) @ Id
5.6V @ 14.9mA
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Supplier Device Package
PG-HDSOP-22
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Grade
Automotive
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Drive Voltage (Max Rds On, Min Rds On)
0V, 18V
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Vgs (Max)
+23V, -5V
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Drain to Source Voltage (Vdss)
750 V
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Gate Charge (Qg) (Max) @ Vgs
80 nC @ 18 V
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Input Capacitance (Ciss) (Max) @ Vds
2869 pF @ 500 V
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Qualification
AEC-Q101
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ECCN
EAR99
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HTSUS
8541.29.0095
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Moisture Sensitivity Level (MSL)
1 (Unlimited)
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REACH Status
REACH Unaffected
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RoHS Status
ROHS3 Compliant
Related Products
SILICON CARBIDE MOSFET
In Stock:
2107
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