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Technical Details

  • Package / Case Module
  • Mounting Type Chassis Mount
  • Configuration 2 N-Channel (Half Bridge)
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Technology Silicon Carbide (SiC)
  • Power - Max 10mW
  • Drain to Source Voltage (Vdss) 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C 141A (Tj)
  • Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 1000V
  • Rds On (Max) @ Id, Vgs 13.9mOhm @ 150A, 15V
  • Gate Charge (Qg) (Max) @ Vgs 354nC @ 15V
  • Vgs(th) (Max) @ Id 3.9V @ 34mA
  • Supplier Device Package Module
  • ECCN EAR99
  • HTSUS 8541.21.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

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