Technical Details

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 66A (Tc)
• Rds On (Max) @ Id, Vgs 45mOhm @ 35A, 18V
• Power Dissipation (Max) 330W (Tc)
• Vgs(th) (Max) @ Id 2.7V @ 18mA
• Supplier Device Package TO-263-7
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 88 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 2897 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant