Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 1.668kW (Tc)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 423A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 19300pF @ 600V
• Rds On (Max) @ Id, Vgs 5.3mOhm @ 300A, 20V
• Gate Charge (Qg) (Max) @ Vgs 1025nC @ 20V
• Vgs(th) (Max) @ Id 2.5V @ 15mA
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095