• In Stock 1900

Technical Details

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature 175°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Power Dissipation (Max) 115W
  • Supplier Device Package TO-247-4L
  • Drain to Source Voltage (Vdss) 1200 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Affected
  • RoHS Status ROHS3 Compliant

Related Products


SICFET N-CH 1.2KV 115A TO247-4

In Stock: 1806

SICFET N-CH 1200V 100A TO247-4L

In Stock: 2863

SICFET N-CH 1200V 30A TO247-4L

In Stock: 2587

75M 1200V 175C SIC FET

In Stock: 1819

650V 120M SIC MOSFET

In Stock: 2097

SIC, MOSFET, 32M, 1200V, TO-247-

In Stock: 1860

SIC, MOSFET, 40M, 1200V, TO-247-

In Stock: 1816

SIC, MOSFET, 45M, 650V, TO-247-4

In Stock: 1500

1200V AUTOMOTIVE SIC 75MOHM FET

In Stock: 1882

13M, 1200V, SIC FET TO-247, AUTO

In Stock: 1895

Top