• In Stock 1806

Technical Details

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Technology SiC (Silicon Carbide Junction Transistor)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 3A
  • Rds On (Max) @ Id, Vgs 1.32Ohm @ 1.5A, 20V
  • Power Dissipation (Max) 69W
  • Vgs(th) (Max) @ Id 4.5V @ 1mA
  • Supplier Device Package TO-247AB
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 20V
  • Vgs (Max) +25V, -5V
  • Drain to Source Voltage (Vdss) 1700 V
  • Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 124 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

Related Products


SICFET N-CH 1700V 4.9A TO247-3

In Stock: 2169

SIC MOSFET BVDSS: >1000V TO247-4

In Stock: 1532

SIC MOSFET N-CH 9A TO247-3

In Stock: 3028

SIC MOSFET N-CH 61A TO247-3

In Stock: 2513

SIC MOSFET N-CH 61A TO247-4

In Stock: 2204

MOSFET N-CH 1700V 2A TO247

In Stock: 1722

MOSFET 1200V 25A TO-247

In Stock: 1501

TRANS SJT 1700V TO247-4

In Stock: 1710

N-CHANNEL MOSFET,TO-247-4

In Stock: 1838

Top