- Product Model AONV070V65G1
- Brand Alpha and Omega Semiconductor, Inc.
- RoHS Yes
- Description GAN
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1500
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 16A
- Rds On (Max) @ Id, Vgs 90mOhm @ 6A, 6V
- Power Dissipation (Max) 125W
- Vgs(th) (Max) @ Id 2.3V @ 5mA
- Supplier Device Package 8-DFN (8x8)
- Drive Voltage (Max Rds On, Min Rds On) 6V
- Vgs (Max) 6V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 6 V
- Input Capacitance (Ciss) (Max) @ Vds 203 pF @ 400 V
- ECCN EAR99
- HTSUS 8541.29.0095
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
650V, 11A, N-CHANNEL GAN FET IN
In Stock: 3961
650V GAN HEMT, 200MOHM, DFN5X6.
In Stock: 5855
TRANS GAN BUMPED DIE
In Stock: 14147
650 V, 140 MOHM GALLIUM NITRIDE
In Stock: 3876
100 V, 3.2 MOHM GALLIUM NITRIDE
In Stock: 2315
150 V, 7 MOHM GALLIUM NITRIDE (G
In Stock: 5557
ECOGAN, 650V 20A DFN8080K, E-MOD
In Stock: 5114
GANFET N-CH 650V 30A DFN8X8
In Stock: 1600
650 V, 75 MOHM TYP., 15 A, E-MOD
In Stock: 1500
RF MOSFET GAN HEMT 400V PWRFLAT
In Stock: 1500
