- Product Model FF8MR12W1M1HS4PB11BPSA1
- Brand IR (Infineon Technologies)
- RoHS Yes
- Description SIC 2N-CH 1200V AG-EASY1B
- Categories FET, MOSFET Arrays
- In Stock 30
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 100A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 800V
- Rds On (Max) @ Id, Vgs 8.1mOhm @ 100A, 18V
- Gate Charge (Qg) (Max) @ Vgs 297nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 40mA
- Supplier Device Package AG-EASY1B
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
SIC 2N-CH 1200V 105A MODULE
In Stock: 1
SIC 2N-CH 1200V 78A MODULE
In Stock: 40
SIC 2N-CH 1200V 45A AG-EASY1B
In Stock: 24
SIC 2N-CH 1200V 85A AG-EASY2B
In Stock: 45
SIC 4N-CH 1200V AG-EASY3B
In Stock: 9
SIC 2N-CH 1200V 170A MODULE
In Stock: 9
SIC 2N-CH 1200V 145A MODULE
In Stock: 29
SIC 2N-CH 1200V 200A MODULE
In Stock: 18
ELITESIC, 3 MOHM SIC M3S MOSFET,
In Stock: 32
