- Product Model G400P06T
- Brand Goford Semiconductor
- RoHS Yes
- Description P-60V,-32A,RD(MAX)<40M@-10V,VTH-
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 1629
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 32A (Tc)
- Rds On (Max) @ Id, Vgs 40mOhm @ 12A, 10V
- Power Dissipation (Max) 110W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2598 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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