- Product Model GT100N12T
- Brand Goford Semiconductor
- RoHS Yes
- Description N120V,RD(MAX)<10M@10V,VTH2.5V~3.
- Categories Single FETs, MOSFETs
- In Stock 1668
Technical Details
- Package / Case TO-220-3
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 70A (Tc)
- Rds On (Max) @ Id, Vgs 10mOhm @ 35A, 10V
- Power Dissipation (Max) 100W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-220
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 60 V
- ECCN EAR99
- HTSUS 8541.29.0095
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


