Technical Details

• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 36A (Tc)
• Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 18V
• Power Dissipation (Max) 238W (Tc)
• Vgs(th) (Max) @ Id 4.9V @ 1mA
• Supplier Device Package H2PAK-7
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1233 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant