- Product Model G2R120MT33J
- Brand GeneSiC Semiconductor
- RoHS Yes
- Description SIC MOSFET N-CH TO263-7
- Categories Single FETs, MOSFETs
-
PDF
- In Stock 2139
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A
- Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V
- Supplier Device Package TO-263-7
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -10V
- Drain to Source Voltage (Vdss) 3300 V
- Gate Charge (Qg) (Max) @ Vgs 145 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 3706 pF @ 1000 V
- California Prop 65 California Prop 65 Information
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant
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