- Product Model SCT3120AW7TL
- Brand ROHM Semiconductor
- RoHS Yes
- Description SICFET N-CH 650V 21A TO263-7
- Categories Single FETs, MOSFETs
- In Stock 2310
Technical Details
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 21A (Tc)
- Rds On (Max) @ Id, Vgs 156mOhm @ 6.7A, 18V
- Power Dissipation (Max) 100W
- Vgs(th) (Max) @ Id 5.6V @ 3.33mA
- Supplier Device Package TO-263-7
- Vgs (Max) +22V, -4V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 38 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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