Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C
• Technology GaNFET (Cascode Gallium Nitride FET)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 34A (Tc)
• Rds On (Max) @ Id, Vgs 63mOhm @ 22A, 10V
• Power Dissipation (Max) 119W (Tc)
• Vgs(th) (Max) @ Id 4.4V @ 700µA
• Supplier Device Package TO-247-3
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 900 V
• Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 600 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)