- Product Model BSO612CVGHUMA1
- Brand IR (Infineon Technologies)
- RoHS No
- Description MOSFET N/P-CH 60V 3A/2A 8DSO
- Categories FET, MOSFET Arrays
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- In Stock 1500
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2W
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 3A, 2A
- Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
- Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 10V
- Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V
- Vgs(th) (Max) @ Id 4V @ 20µA
- Supplier Device Package PG-DSO-8
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected


